授课教师：柳月波

教师简介（中英文）：

柳月波，高级工程师，2021年获得中山大学光学工程博士学位，现就职于工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室，从事先进半导体电子器件和光电子器件的可靠性研究，负责十四五专题多个子课题、装发实验室基金、广州市技术基础基金等多个项目。在多沟道AlGaN/GaN器件特性、AlGaN/GaN异质结表面态分部、类HEMT微型固态pH传感器、金字塔形LED特性、GaN基生物光探针特性等研究方面取得了一系列成果，以第一作者身份在IEEE Photonics Journal、Materials Science in Semiconductor Processing等国内外权威期刊上发表SCI论文数十篇，并担任Semiconductor Science and Technology、Journal of Physics D: Applied Physics等多个期刊的审稿人。

Yuebo Liu, a senior engineer, received optical engineering PhD from Sun Yat-sen University in 2021. He is now working in Reliability Physics and Application Technology of Electronic Component Key Laboratory of The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology. He is engaged in the reliability research of advanced semiconductor electronic devices and optoelectronic devices, and mainly responsible for projects including three 14th Five-Year Plan sub-topics, provincial and Ministry Programs of Science Fund, two Guangzhou Technology Foundation Funds. He has made a series of achievements in the research of multi-channel AlGaN/GaN device characteristics, AlGaN/GaN heterostructure surface state division, HEMT-like miniature solid-state pH sensor, pyramidal LED characteristics, GaN-based bio-optical probe characteristics, etc. He has published dozens of SCI papers as the first author in IEEE Photonics Journal, Materials Science in Semiconductor Processing and other journals, He has also served as a reviewer for many journals such as Semiconductor Science and Technology, Journal of Physics D: Applied Physics, etc.

课程简介（中英文）：

本课程分为三个主要部分，第一部分主要讲授GaN基电子器件技术发展现状和技术创新概况、GaN、GaAs、SiC在微波射频、功率器件等领域的应用前景和比较。第二部分主要讲授宽禁带半导体的材料特性和表征方法、二维电子气的形成机理、GaN基HEMT和THz肖特基二极管的制备方法。第三部分主要讲授HEMT型pH传感器和GaN基THz肖特基二极管的器件特性、仿真分析方法、器件的可靠性评价方法。

This course is divided into three main parts, the first part mainly teaches GaN-based electronic device technology development status and technology innovation overview, GaN, GaAs, SiC in microwave radio frequency, power devices and other fields of application prospects and comparison. The second part mainly teaches the material properties and characterization methods of broadband semiconductors, the formation mechanism of two-dimensional electron gas, and the preparation methods of GaN-based HEMT and THz Schottky diodes. The third part deals with the device characteristics of HEMT-based pH sensors and GaN-based THz Schottky diodes, simulation and analysis methods, and the reliability evaluation methods of the devices.